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 DSEP 2x 61-03A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x 60 A VRRM = 300 V trr = 30 ns
miniBLOC, SOT-227 B
VRSM V 300
VRRM V 300
Type
DSEP 2x 61-03A
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight
Conditions TC = 75C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 4 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive
Maximum Ratings 100 60 600 1.6 0.4 -40...+150 150 -40...+150 A A A mJ A C C C W V~ Nm/lb.in. Nm/lb.in. g
q q
Features
q
q q q q q q
TC = 25C 50/60 Hz, RMS IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical
140 2500 1.1-1.5/9-13 1.1-1.5/9-13 30
q q
International standard package miniBLOC Isolation voltage 2500 V~ UL registered E 72873 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour
Applications
q
Symbol IR x
Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 125C TVJ = 25C
Characteristic Values typ. max. 0.65 2.5 1.26 1.68 0.85 0.1 mA mA V V K/W K/W ns 4.8 A
q
q
q q q
VF y RthJC RthCH trr IRM
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Advantages
q
IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C
30
q
q
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
Dimensions see outlines.pdf
025
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-2
DSEP 2x 61-03A
160 A IF 120 TVJ=150C TVJ=100C 80 TVJ= 25C 400 Qr
800 TVJ = 100C nC 600 IF = 120A IF = 60A IF = 30A VR = 150V IRM
25 A 20
TVJ = 100C VR = 150V IF = 120A IF = 60A IF = 30A
15
10 40 200 5
0 0.0
0.5
1.0
1.5 V VF
2.0
0 100
0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
Fig. 1 Forward current IF versus VF
1.4
Fig. 2 Reverse recovery charge Qr versus -diF/dt
90 ns TVJ = 100C VR = 150V
Fig. 3 Peak reverse current IRM versus -diF/dt
14 V 12 VFR 10 tfr VFR TVJ = 100C IF = 60A 0.85 s 0.80 tfr 0.75
1.2 Kf 1.0 IRM
trr 80
70 Qr 60
0.8
IF = 120A IF = 60A IF = 30A
8
0.70
0.6
6
0.65
0.4 0 40 80 120 C 160 TVJ
50 0 200 400 600 -diF/dt 800 A/ms 1000
4 0 200 400
0.60 600 A/ms 1000 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.307 0.353 0.089 0.101 ti (s) 0.0055 0.009 0.0007 0.04
0.001
DSEP 2x61-03A
0.0001 0.00001
0.0001
0.001
0.01
0.1
1 t
s
10
Fig. 7 Transient thermal resistance junction to case
025
NOTE: Fig. 2 to Fig. 6 shows typical values
(c) 2000 IXYS All rights reserved
2-2


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